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Proceedings Paper

Resonant intersubband transitions of holes in uniaxially stressed p-Ge
Author(s): A. A. Abramov; V. I. Akimov; A. T. Dalakyan; Victor N. Tulupenko; D. A. Firsov; Vladimir I. Gavrilenko; V. M. Bondar; V. N. Poroshin
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Paper Abstract

Probabilities of intra- and intersubband acoustic scattering of holes in uniaxially stressed p-Ge in electric field are calculated. Perturbation of the free hole states by impurity potential is taken into account. Perturbation has a resonant nature and takes maximum values in the region of hole energy around energy position of quasi-local impurity state. Probabilities of acoustic and impurity scattering increase abruptly in that region. Calculated probabilities are used for Monte-Carlo simulation of hole motion in uniaxially stressed p-Ge in strong electric field. The essential influence of intersubband hole transitions with partaking of high-frequency acoustic phonons on the electric current is shown. Comparisons of theoretically obtained current-pressure dependences and experimental ones is performed.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425495
Show Author Affiliations
A. A. Abramov, Donbass State Engineering Academy (Ukraine)
V. I. Akimov, Donbass State Engineering Academy (Ukraine)
A. T. Dalakyan, Donbass State Engineering Academy (Ukraine)
Victor N. Tulupenko, Donbass State Engineering Academy (Ukraine)
D. A. Firsov, St. Petersburg State Technical Univ. (Russia)
Vladimir I. Gavrilenko, Institute for the Microstructure of Physics (Russia)
V. M. Bondar, Institute of Physics (Ukraine)
V. N. Poroshin, Institute of Physics (Ukraine)


Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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