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Proceedings Paper

Monte Carlo simulation of small- and large-signal response operation of a GaN THz maser
Author(s): Eugenijus Starikov; P. Shiktorov; Viktoras Gruzinskis; Lino Reggiani; L. Varani; J. C. Vaissiere; Jian H. Zhao
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Paper Abstract

Amplification and generation of microwave radiation by optical phonon transit-time resonance GaN THz maser is investigated theoretically by Monte Carlo simulations. Results confirm that GaN is a promising material for THz power generation. The amplification and generation occurs in the wide frequency range of 0.3 to 3 THz and persists in the THz frequency range up to liquid nitrogen temperatures and doping levels of about 5 X 1016 cm-3.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425491
Show Author Affiliations
Eugenijus Starikov, Semiconductor Physics Institute (Lithuania)
P. Shiktorov, Semiconductor Physics Institute (Lithuania)
Viktoras Gruzinskis, Semiconductor Physics Institute (Lithuania)
Lino Reggiani, INFM and Univ. degli Studi di Lecce (Italy)
L. Varani, Univ. Montpellier II (France)
J. C. Vaissiere, Univ. Montpellier II (France)
Jian H. Zhao, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials

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