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Proceedings Paper

Thin films of EuO-CeO2 semiconductor system
Author(s): K. D. Scurtul; Alexandra N. Shmyryeva; Tatiana V. Semikina
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Paper Abstract

This work represents the results of synthesis and research of the thin film properties based on EuO-CeO2 system, which alter their properties in dependence on percent concentration of one of components. It was obtained that double-composition EuO-CeO2 oxide films with EuO content of 30 - 40 weight % demonstrate the extreme properties: a minimal dark conductivity is 10-10 (Omega) -1m-1, a maximal photo-sensibility and nonlinearity of current-voltage characteristics is 1.48, a minimal temperature resistance coefficient is 10-3 1/degree. In particular, the rare- earth semiconductor photoconductivity kinetics is connected with decreasing of photoconductivity relaxation time at illumination intensity gain. At illumination intensity of I equals 105 - 106 W/cm2 the photoconductivity relaxation time has been found to be 10-10 sec.

Paper Details

Date Published: 10 April 2001
PDF: 5 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425480
Show Author Affiliations
K. D. Scurtul, National Technical Univ. of Ukraine (Ukraine)
Alexandra N. Shmyryeva, National Technical Univ. of Ukraine (Ukraine)
Tatiana V. Semikina, National Technical Univ. of Ukraine (Ukraine)

Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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