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Proceedings Paper

Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: determination and analysis
Author(s): Dmitry G. Revin; Vladimir Ya. Aleshkin; A. V. Antonov; Vladimir G. Gavrilenko; D. M. Gaponova; Z. F. Krasil'nik; B. N. Zvonkov; E. A. Uskova
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Paper Abstract

Lateral electric field (up to 2 kV/cm) effects on light transmittance near the fundamental edge absorption in selectively doped p-type In0.21Ga0.79As/GaAs heterostructure with Zn delta-doped barriers have been investigated. The hole distribution function modulations were calculated using the light transmittance modulation data. Fluctuations of the quantum well parameters were taken into account.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425478
Show Author Affiliations
Dmitry G. Revin, Institute for Physics of Microstructures (Russia)
Vladimir Ya. Aleshkin, Institute for Physics of Microstructures (Russia)
A. V. Antonov, Institute for Physics of Microstructures (Russia)
Vladimir G. Gavrilenko, Institute for Physics of Microstructures (Russia)
D. M. Gaponova, Institute for Physics of Microstructures (Russia)
Z. F. Krasil'nik, Institute for Physics of Microstructures (Russia)
B. N. Zvonkov, Nizhny Novgorod State Univ. (Russia)
E. A. Uskova, Nizhny Novgorod State Univ. (Russia)


Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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