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Proceedings Paper

Structure investigation of luminescent porous GaAs layers
Author(s): Rimgaudas Adolfas Bendorius; Vytautas Jasutis; Vaidas Pacebutas; J. Sabataityte; Valentinas J. Snitka; I. Simkiene; H. Tvardauskas
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Paper Abstract

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, AFM and optical methods. It was established that increasing etching duration and current density change the porosity of bulk GaAs and at the same time, both gallium and arsenic oxides are formed on the sample surface. Photoluminescence spectra of investigated porous layers consist of 'infrared' and 'green' spectral structures. The 'infrared' structure exhibits a red-shift of its peak energies, and intensity of 'green' structure is highly dependent on etching conditions. Possible reasons of origin and of changes in those spectra are discussed.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425477
Show Author Affiliations
Rimgaudas Adolfas Bendorius, Semiconductor Physics Institute (Lithuania)
Vytautas Jasutis, Semiconductor Physics Institute (Lithuania)
Vaidas Pacebutas, Semiconductor Physics Institute (Lithuania)
J. Sabataityte, Semiconductor Physics Institute (Lithuania)
Valentinas J. Snitka, Kaunas Univ. of Technology (Lithuania)
I. Simkiene, Semiconductor Physics Institute (Lithuania)
H. Tvardauskas, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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