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Proceedings Paper

Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H
Author(s): Ivan Pelant; Katerina Luterova; Petr Fojtik; Jean-Luc Rehspringer; Dominique Muller; Jean-Jacques Grob; Juraj Dian; Jan Valenta; Rolandas Tomasiunas; Bernd H. Honerlage
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Paper Abstract

We review critically recent results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si+- implanted SiO2 films from the point of view of light- emission applications. Wide bandgap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region. Electroluminescence, however, occurs after previous recrystallization of a-Si:H only and seems not to be perspective for large scale applications. Si+-implanted SiO2 films contain, after proper annealing at 1000 - 1100 degrees Celsius, Si nanocrystals that luminesce in the red. In parallel another emission band can occur (in the blue region) which is related to post-implantation defects. We demonstrate that in SiO2 films homogeneously implanted across the entire film thickness red electroluminescence can be easily observed, presumably due to injection of electron-hole pairs into Si nanocrystals. Finally, the present status of prospects of stimulated emission achievement in low-dimensional Si structures is briefly summarized.

Paper Details

Date Published: 10 April 2001
PDF: 11 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425473
Show Author Affiliations
Ivan Pelant, Institute of Physics (Czech Republic)
Katerina Luterova, Institute of Physics (Czech Republic)
Petr Fojtik, Institute of Physics (Czech Republic)
Jean-Luc Rehspringer, Institut de Physique et Chimie des Materiaux de Strasbourg/CNRS (France)
Dominique Muller, Lab. PHASE/CNRS (France)
Jean-Jacques Grob, Lab. PHASE/CNRS (France)
Juraj Dian, Charles Univ. (Czech Republic)
Jan Valenta, Charles Univ. and Royal Institute of Technology (Czech Republic)
Rolandas Tomasiunas, Vilnius Univ. (Lithuania)
Bernd H. Honerlage, Institut de Physique et Chimie des Materiaux de Strasbourg/CNRS (France)


Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials

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