Share Email Print
cover

Proceedings Paper

Optical properties of GaN layers grown by MOCVD
Author(s): R. Kudrawiec; Leszek Bryja; Jan Misiewicz; Regina Paszkiewicz; Ryszard Korbutowicz; Marek Panek; H. Paszkiewicz; Marek J. Tlaczala
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The interband transitions in thin epitaxial films grown by metalorganic chemical vapour deposition (MOCVD) have been studied as a function of temperature (1 0-300K) by photoluminescence (PL) and reflectance measurements. In photoluminescence at low temperature bound and free excitons are observed. Temperature dependence of free exciton energies have been studied in reflectance measurement. In the reflectance spectra excitonic interband transitions f9V.4'7C (exciton FX(A)), f7V (upper band)JT7C (exciton FX(B)) and F7"(lower band)I7C (exciton FX(C)) were observed. From temperature dependence of the excitonic spectra the energy gap dependence is determined using both the Varshni E(T)=E(O)-aT2/(T0+T) and Bosse-Einstein E(T)=E(O)-A/[exp(3/T)-1] expressions.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425467
Show Author Affiliations
R. Kudrawiec, Wroclaw Univ. of Technology (Poland)
Leszek Bryja, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Regina Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Ryszard Korbutowicz, Wroclaw Univ. of Technology (Poland)
Marek Panek, Wroclaw Univ. of Technology (Poland)
H. Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Marek J. Tlaczala, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

© SPIE. Terms of Use
Back to Top