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Proceedings Paper

Comparison of the performance of near-room temperature Hg1-xCdxTe and InAs1-xSbx photodiodes
Author(s): Robert Ciupa
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Paper Abstract

A numerical technique has been used to solve the carrier transport equations for Hg1-xCdxTe and InAs1-xSbx photodiode operating near room temperature. The model calculates the spatial distribution of the electric field, the electron hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R0A product, detectivity) is analyzed. The R0A product is controlled by a diffusion limited mechanism. In the case of HgCdTe photodiodes, only two processes of generation and recombination are important: Auger 1 and Auger 7; whereas in InAsSb photodiodes also the Auger S process has an essential significance. It is proved that Hg1-xCdxTe and InAs1- xSbx photodiodes of optimum construction have similar detection parameters. This fact together with some advantages of InAsSb in comparison with HgCdTe indicates that InAsSb ia a potential competitor to HgCdTe as material for intrinsic detectors in the 3-5 micrometers and 8-12 micrometers spectral range.

Paper Details

Date Published: 17 April 2001
PDF: 7 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425463
Show Author Affiliations
Robert Ciupa, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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