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Proceedings Paper

Photoelectric properties of inhomogeneous infrared MIS photodetectors in base of HgCdTe and Si
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Paper Abstract

The abnormal photo electric properties of MIS structures in base of Si and HgCdTe, such as a significant photo-emf signal in enhancement and drop of the local photo-emf in inversion, were experimentally investigated. It has been established that the reason for the significant photo-emf signal in the state of enhancement and the related features of the photo electric properties of the Si-MIS-structure, is the photosensitivity in the region far from the electrode, associated with non-uniform distribution of electrically active defects in this region. It has also been established that the non-uniformity in surface potential (between the sub-electrode region and the region away from the electrode or between different points in sub-electrode region) may result in a drop of the local photo-emf in the state of inversion. A conclusion has been made that the redistribution of non-equilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of the MIS structures.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425462
Show Author Affiliations
Aleksander V. Voitsekhovskii, Siberian Physico-Technical Institute (Russia)
Sergey N. Nesmelov, Siberian Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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