Share Email Print
cover

Proceedings Paper

Photosensitive structures using Hg1-xCdxTe solid solutions grown by molecular beam epitaxy
Author(s): Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; N. A. Koulchitskii
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Parameters of Hg1-xCdxTe epitaxial structures produced by molecular beam epitaxy are presented. Results of measurements of the carrier recombination lifetime, sensitivity and the noise voltage of photosensitive elements have been studied. A high detectivity was obtained over a broad wavelength range.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425460
Show Author Affiliations
Aleksander V. Voitsekhovskii, Siberian Physico-Technical Institute (Russia)
Andrej P. Kokhanenko, Siberian Physico-Technical Institute (Russia)
N. A. Koulchitskii, Siberian Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

© SPIE. Terms of Use
Back to Top