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Proceedings Paper

Impact of the LWIR photodiodes geometry on their basic parameters
Author(s): Jakub Wenus; Jaroslaw Rutkowski; Krzysztof Adamiec; Leszek Kubiak; Pawel Madejczyk
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Paper Abstract

This paper concerns HgCdTe heterostructure photodiodes for detection of infrared radiation from 8-12micrometers spectral range. Heterostructures were made by liquid phase epitaxy on the CdZnTe substrates. The cap layer of wider energy gap was used to suppress the generation-recombination current from the top contact. P-on-n junctions were placed in the narrow band-gap area close to the graded region. It was accomplished by appropriate selection of the cap layer thickness and adequate choice of parameters of the As diffusion process. Photodiodes were mesa delineated and illuminated through the substrate. Analysis of the impact of p-n junction location within a heterostructure, contact locations and mesa depth on photo diode parameters, was carried out. The experimental results were compared with two-dimensional numerical calculations performed in APSYS.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425457
Show Author Affiliations
Jakub Wenus, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Leszek Kubiak, Military Univ. of Technology (Poland)
Pawel Madejczyk, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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