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Proceedings Paper

Photovoltaic detectors based on porous silicon heterostructures
Author(s): Liubomyr S. Monastyrskii; Volodymyr P. Savchyn; Vira B. Kytsay; Petro P. Parandii
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Paper Abstract

Photosensitivity of single and double heterostructures based on porous silicon was investigated. A number of double heterostructures were created by formation of the optical contacts on porSi/Si heterostructures and GeSe single crystal thin plate (d approximately 20micrometers ). Wide band photovoltaic sensitivity from 0.4 to 1.2 micrometers was observed for different heterostructures. The behavior of experimental curves was explained using energy band configuration. GaSe/porSi/Si heterostructures were also highly sensitive to mechanical stresses. It was concluded that heterostructures based on GaSe/porSi/Si plates might find their application as wide-band photo converters and tenzosensitive devices.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425454
Show Author Affiliations
Liubomyr S. Monastyrskii, Ivan Franko National Univ. of Lviv (Ukraine)
Volodymyr P. Savchyn, Ivan Franko National Univ. of Lviv (Ukraine)
Vira B. Kytsay, Ivan Franko National Univ. of Lviv (Ukraine)
Petro P. Parandii, Ivan Franko National Univ. of Lviv (Ukraine)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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