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Proceedings Paper

Stress-induced effects in semiconducting epitaxial layers
Author(s): Jadwiga Bak-Misiuk; J. Domagala; Andrzej Misiuk; Janusz Kaniewski; J. Adamczewska; J. Trela; Kazimierz Reginski; D. Dobosz; M. Prujszczyk; J. C. Tedenac
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Paper Abstract

The effect of high temperature-high pressure (HT-HP) treatment of semiconducting layers on their structural properties was investigated by X-ray methods. The changes of the strain state of the samples induced by the HT-HP treatment depend on the initial strain state and growth method of thin layers. Only for the layers obtained by MBE methods the change of strain state of layers was found. Decrease of the dislocation density was detected for relaxed InAs/GaAs layers after the treatment at 673K - 1.1 Gpa for 1 h. For strained AlGaAs/GaAs samples the pressure - induces stress is responsible for creation of dislocation.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425443
Show Author Affiliations
Jadwiga Bak-Misiuk, Institute of Physics (Poland)
J. Domagala, Institute of Physics (Poland)
Andrzej Misiuk, Institute of Electron Technology (Poland)
Janusz Kaniewski, Institute of Electron Technology (Poland)
J. Adamczewska, Institute of Physics (Poland)
J. Trela, Institute of Physics (Poland)
Kazimierz Reginski, Institute of Electron Technology (Poland)
D. Dobosz, Institute of Physics (Poland)
M. Prujszczyk, Institute of Electron Technology (Poland)
J. C. Tedenac, Lab. de Physicochemie des Materiaux Solides (France)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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