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Proceedings Paper

Electrical and photoelectrical behavior of Au/n-CdTe junctions
Author(s): Zsolt J. Horvath; V. P. Makhniy; Istvan Reti; M. V. Demych; Vo Van Tuyen; P. M. Gorley; Janos Balazs; Kostyantyn S. Ulyanitsky; L. Dozsa; P. P. Horley; Balint Podor
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Paper Abstract

The electrical and photo electrical behavior of Au/n-CdTe junctions prepared no CdTe mono crystalline substrates were studied. Both properties depended strongly on the parameters of the compensated high-resistive layer at the CdTe surface formed by annealing in air during preparation.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425442
Show Author Affiliations
Zsolt J. Horvath, Research Institute for Technical Physics and Materials Science and Technical College of Bu (Hungary)
V. P. Makhniy, Chernivtsi State Univ. (Ukraine)
Istvan Reti, Research Institute for Technical Physics and Materials Science (Hungary)
M. V. Demych, Chernivtsi State Univ. (Ukraine)
Vo Van Tuyen, Research Institute for Technical Physics and Materials Science (Hungary)
P. M. Gorley, Chernivtsi State Univ. (Ukraine)
Janos Balazs, Research Institute for Technical Physics and Materials Science (Hungary)
Kostyantyn S. Ulyanitsky, Chernivtsi State Univ. (Ukraine)
L. Dozsa, Research Institute for Technical Physics and Materials Science (Hungary)
P. P. Horley, Chernivtsi State Univ. (Ukraine)
Balint Podor, Research Institute for Technical Physics and Materials Science (Hungary)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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