Share Email Print
cover

Proceedings Paper

Photoreflectance investigation of delta-doped MOVPE-grown AlxGa1-xAs layers
Author(s): M. Nowaczyk-Utko; G. Sek; Jan Misiewicz; Beata Sciana; D. Radziewicz; Marek J. Tlaczala
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Photoreflectance (PR) spectroscopy has been applied to the investigation of Si (delta) -doped AlxGa1-xAs layers grown by metal-organic vapor phase epitaxy on GaAs substrates. Measurements have been carried out on samples with aluminum content of 0,0.35 and 1. The observation of Franz-Keldysh oscillations (FKO) in a number of more than 10 (in the best case) and application of the fast Fourier transformation has allowed us to determine the internal electric field with high accuracy. Thus, the potential barrier between surface and (delta) -doped region has been estimated. Finally, the contribution of heavy and light hole related transitions to the FKO has been resolved.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425441
Show Author Affiliations
M. Nowaczyk-Utko, Wroclaw Univ. of Technology (Poland)
G. Sek, Wroclaw Univ. of Technology (Poland)
Jan Misiewicz, Wroclaw Univ. of Technology (Poland)
Beata Sciana, Wroclaw Univ. of Technology (Poland)
D. Radziewicz, Wroclaw Univ. of Technology (Poland)
Marek J. Tlaczala, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

© SPIE. Terms of Use
Back to Top