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Proceedings Paper

Investigation of the strain layers in multiple quantum wells by magnetophonon resonance
Author(s): G. Tomaka; Eugen M. Sheregii; J. Cebulski; W. Sciuk; Wlodzimierz Strupinski; Lech Dobrzanski
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Paper Abstract

Magnetophonon Resonance in parallel transport of three types of Multiple Quantum Wells was studied. They consisted of ten QW of GaAs and ten AlGaAs barriers, and were obtained by the Metal Organic Vapor Deposition an semi-insulating GaAs. The MPR research were performed in pulsed magnetic fields up to 30 T. The transverse magneto resistance was measured between 77K and 340K and the MPR oscillations extracted by subtracting a voltage linear in magnetic field. The oscillating part of magneto resistance (Delta) (rho) xx was recorded. A fine structure of MPR peaks was observed. This effect could be attributed to two phenomena: contribution of barrier phonons and influence of thermostresses.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425440
Show Author Affiliations
G. Tomaka, Rzeszow Pedagogical Univ. (Poland)
Eugen M. Sheregii, Rzeszow Pedagogical Univ. (Poland)
J. Cebulski, Rzeszow Pedagogical Univ. (Poland)
W. Sciuk, Rzeszow Pedagogical Univ. (Poland)
Wlodzimierz Strupinski, Institute of Electronic Materials Technology (Poland)
Lech Dobrzanski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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