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Proceedings Paper

Optical measurements of strain and stress in thin films
Author(s): Sigitas Tamulevicius; Liudvikas Augulis; Giedrius Laukaitis
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Paper Abstract

Principles and applications of the cantilever technique to measure strain and stress in thin films are presented. Different optical interferometers were created and applied to control stress-thickness dependence during technological processes or to measure two-dimensional strain distribution in thin film. An original scheme combining advantages of the classical interferometer and electronic speckle pattern interferometer is presented.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425439
Show Author Affiliations
Sigitas Tamulevicius, Kaunas Univ. of Technology (Lithuania)
Liudvikas Augulis, Kaunas Univ. of Technology (Lithuania)
Giedrius Laukaitis, Kaunas Univ. of Technology (Lithuania)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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