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Proceedings Paper

Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials
Author(s): J. Cwirko; C. Przybysz; Robert Cwirko; Pawel Kaminski
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Paper Abstract

The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 kHz at temperature from 77K to 350K has been described.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425433
Show Author Affiliations
J. Cwirko, Military Univ. of Technology (Poland)
C. Przybysz, Military Univ. of Technology (Poland)
Robert Cwirko, Military Univ. of Technology (Poland)
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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