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Proceedings Paper

Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials
Author(s): Michal Pawlowski; M. Miczuga; Pawel Kaminski; Roman Kozlowski
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Paper Abstract

Deep states in semi-insulating Si are investigated by analyzing of two-dimensional Photo-Induced Transient Spectroscopy (PITS) spectra. The results exemplify new potentialities of the advanced computer programming technique.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425431
Show Author Affiliations
Michal Pawlowski, Military Univ. of Technology (Poland)
M. Miczuga, Military Univ. of Technology (Poland)
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology

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