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Proceedings Paper

Deep-level defects in semi-insulating LT MBE GaAs
Author(s): Roman Kozlowski; Pawel Kaminski; Peter Kordos; Michal Pawlowski; Robert Cwirko
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Paper Abstract

High resolution photo induced transient spectroscopy has been utilized to study defect centers in semi-insulating molecular beam epitaxy GaAs grown at temperatures 300 and 400 $DEGC. A number of traps with activation energies ranging from 0.004 to 0.64 eV have been detected. The traps are tentatively identified with native defects in GaAs lattice. The effect of the growth temperature on the defect structure of the layers is shown.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425430
Show Author Affiliations
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
Peter Kordos, Research Ctr. Juelich (Germany)
Michal Pawlowski, Military Univ. of Technology (Poland)
Robert Cwirko, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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