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Proceedings Paper

X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method
Author(s): Roman Rumianowski; Roman S. Dygdala; Waclaw Bala; Jaroslaw Sylwisty
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Paper Abstract

PbSe thin layers were grown by pulsed laser deposition. The layers were obtained on Si substrates at temperature 45K to 650K. The structure of the layers and its lattice parameters were estimated from the X-ray diffraction measurements. The strong intensity of (200)-PbSe peak indicates a self-texture preference in the c-axis direction.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425429
Show Author Affiliations
Roman Rumianowski, Warsaw Univ. of Technology/Plock (Poland)
Roman S. Dygdala, N. Copernicus Univ. (Poland)
Waclaw Bala, N. Copernicus Univ. (Poland)
Jaroslaw Sylwisty, N. Copernicus Univ. (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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