Share Email Print
cover

Proceedings Paper

Current instabilities in GaAs/InAs quantum dot structures
Author(s): Zsolt J. Horvath; Balint Podor; P. Frigeri; Santina Franchi; E. Gombia; R. Mosca; Vo Van Tuyen; L. Dozsa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Unexpected excess current was obtained in GaAs/InAs quantum dot structures at low temperatures and low current levels. This excess current exhibited instabilities with changing the bias, and over the time. It has been concluded that the excess current is a minority injection current connected with the high recombination rate through quantum dots. The instabilities are connected with unstable charge occupation of quantum dots.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425420
Show Author Affiliations
Zsolt J. Horvath, Research Institute for Technical Physics and Materials Science (Hungary)
Balint Podor, Research Institute for Technical Physics and Materials Science (Hungary)
P. Frigeri, MASPEC Institute (Italy)
Santina Franchi, MASPEC Institute (Italy)
E. Gombia, MASPEC Institute (Italy)
R. Mosca, MASPEC Institute (Italy)
Vo Van Tuyen, Research Institute for Technical Physics and Materials Science (Hungary)
L. Dozsa, Research Institute for Technical Physics and Materials Science (Hungary)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

© SPIE. Terms of Use
Back to Top