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Proceedings Paper

Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes
Author(s): Herbert W. Kunert
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Paper Abstract

The epitaxial grown GaAs quantum wells (Qws) (with the width L1=2.5nm and L2=15nm) were subjected to alpha particle irradiation at doses (7.8*1012-3.4*1013)cm-2. The response of the Qws was studied by means of the low temperature photo luminescence (PL) and inelastic light spectroscopy. The damage accumulation leads to a shift of the quasi particle energy level towards higher energy and to a decrease of the LO1 and LO2 modes and to an increase of the TO2 frequency mode of the Al0.3Ga0.7As slabs.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425419
Show Author Affiliations
Herbert W. Kunert, Univ. of Pretoria (South Africa)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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