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Proceedings Paper

Epitaxy on GaN bulk crystals
Author(s): M. Leszczynski; P. Prystawko; R. Czernecki; J. Lehnert; Piotr Perlin; P. Wisniewski; Cz. Skierbiszewski; T. Suski; G. Nowak; Fouad Karouta; J. Holst; I. Grzegory; S. Porowski
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Paper Abstract

The article shows the most important experimental results describing the properties of nitride layers on GaN single crystals. The layers were grown using metal-organic chemical vapor deposition (MOCVD). The growth was monitored by in-situ laser reflectometry. The layers contain very small dislocation density of about 10 to 103 cm$min2 (the same as in GaN substrates). Morphology and crystallographic quality was examined using atomic force microscopy and X-ray diffraction. The layers have excellent photo luminescent properties which have a direct impact on the optoelectronic device properties.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425412
Show Author Affiliations
M. Leszczynski, UNIPRESS (Poland)
P. Prystawko, UNIPRESS (Poland)
R. Czernecki, UNIPRESS (Poland)
J. Lehnert, UNIPRESS (Poland)
Piotr Perlin, UNIPRESS (Poland)
P. Wisniewski, UNIPRESS (Poland)
Cz. Skierbiszewski, UNIPRESS (Poland)
T. Suski, UNIPRESS (Poland)
G. Nowak, UNIPRESS (Poland)
Fouad Karouta, Eindhoven Univ. of Technology (Netherlands)
J. Holst, Technische Univ. Berlin (Germany)
I. Grzegory, UNIPRESS (Poland)
S. Porowski, UNIPRESS (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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