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Proceedings Paper

Growth and photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films
Author(s): Alexander I. Dirochka; Vladimir F. Chishko; Igor L. Kasatkin; Vyacheslav N. Vasil'kov; Alexandre G. Moisseenko
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Paper Abstract

Pb1-x-yGexSnyTe:In thin films were made using hot wall modified method. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) nPbGeSn

Paper Details

Date Published: 17 April 2001
PDF: 7 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425409
Show Author Affiliations
Alexander I. Dirochka, RD&P Ctr. ORION (Russia)
Vladimir F. Chishko, RD&P Ctr. ORION (Russia)
Igor L. Kasatkin, RD&P Ctr. ORION (Russia)
Vyacheslav N. Vasil'kov, RD&P Ctr. ORION (Russia)
Alexandre G. Moisseenko, Moscow Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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