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Proceedings Paper

Application of GaN laterally overgrown on sapphire
Author(s): Regina Paszkiewicz; Ryszard Korbutowicz; Bogdan Paszkiewicz; D. Radziewicz; J. Kozlowski; Marek J. Tlaczala
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Paper Abstract

The paper presents the results of work concerning the elaboration of GaN pseudo-bulk technology. The growth mechanism of epitaxial lateral overgrowth (ELO) GaN affected by mask patterns and the MOVPE growth process parameters are presented and discussed. The conditions to obtain full coalescence of isolated stripes leading to pseudo-bulk GaN substrate growth are specified.

Paper Details

Date Published: 17 April 2001
PDF: 4 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425404
Show Author Affiliations
Regina Paszkiewicz, Wroclaw Univ. of Technology (Poland)
Ryszard Korbutowicz, Wroclaw Univ. of Technology (Poland)
Bogdan Paszkiewicz, Wroclaw Univ. of Technology (Poland)
D. Radziewicz, Wroclaw Univ. of Technology (Poland)
J. Kozlowski, Wroclaw Univ. of Technology (Poland)
Marek J. Tlaczala, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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