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Proceedings Paper

Growth of PLD Hg1-xCdxTe films on Si-patterned substrates
Author(s): Marian Kuzma; Grzegorz Wisz; Tamara Ya. Gorbach; Petr S. Smertenko; Sergey V. Svechnikov; Ryszard Ciach; Jerzy Morgiel; Anna Rakowska
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Paper Abstract

The growth of Hg1-xCdxTe layers obtained by pulse deposition technique on planar and non-planar patterned Si substrates with the tetragonal pyramids and the hemispherical plates was investigated by SEM, TEM spectroscopy, X-ray diffraction, X-ray analysis and I-V characterization. The effects of the Si substrate type, feature of the substrate patterns, substrate temperature, laser shots number on morphological stability of films, growth mode, films crystallinity and charge transport mechanisms on both Hg1- xCdxTe/Si interface and on Hg1-xCdxTe surface were discussed. The PLD growth of Hg1-xCdxTe films on Si substrates has been optimized both to the formation of stoichiometric films (x=0.2) and to the preparation of x-variable films.

Paper Details

Date Published: 17 April 2001
PDF: 6 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425403
Show Author Affiliations
Marian Kuzma, Rzeszow Pedagogical School (Poland)
Grzegorz Wisz, Rzeszow Pedagogical School (Poland)
Tamara Ya. Gorbach, Institute of Semiconductor Physics (Ukraine)
Petr S. Smertenko, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
Ryszard Ciach, Institute of Metallurgy and Material Science (Poland)
Jerzy Morgiel, Institute of Metallurgy and Material Science (Poland)
Anna Rakowska, Univ. of Mining and Metallurgy (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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