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Proceedings Paper

Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films
Author(s): Vyacheslav D. Bondar; Igor Kukharsky; Bohdan V. Padlyak; Volodymyr Davydov; Bohdan O. Simkiv; Marek Grinberg; Benedykt Kuklinski
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Paper Abstract

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. The dependence of GaN-Mn thin films deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated. The influence of technological conditions of deposition on crystal structure parameters of gallium nitride thin films were investigated. Luminescence and electron spin resonance (ESR) spectra of GaN-Mn thin films have been studied.

Paper Details

Date Published: 17 April 2001
PDF: 5 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425402
Show Author Affiliations
Vyacheslav D. Bondar, Ivan Franko National Univ. of Lviv (Ukraine)
Igor Kukharsky, Ivan Franko National Univ. of Lviv (Ukraine)
Bohdan V. Padlyak, Ivan Franko National Univ. of Lviv and Univ. of Gdansk (Poland)
Volodymyr Davydov, Ivan Franko National Univ. of Lviv (Ukraine)
Bohdan O. Simkiv, Ivan Franko National Univ. of Lviv (Ukraine)
Marek Grinberg, Univ. of Gdansk (Poland)
Benedykt Kuklinski, Univ. of Gdansk (Poland)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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