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Proceedings Paper

Design and modeling of a silicon resonant pressure sensor
Author(s): Zheng Cui; Deyong Chen; Shanhong Xia
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Paper Abstract

Modelling of a silicon resonator as a pressure sensor is presented. The resonator is electrothermally excited and the resonance frequency shift is detected by a piezoresistive thin film detector. Computer simulation using commercial MEMS software tool IntelliSuiteTM is compared with analytical model. Various design aspects, such as the pressure sensitivity, electrothermal heating of vibrating beam, influence of detection current and damping effect are investigated. Silicon resonator sensor have been fabricated and measured. The characteristics predicted by computer simulation has been confirmed by experimental results.

Paper Details

Date Published: 5 April 2001
PDF: 7 pages
Proc. SPIE 4408, Design, Test, Integration, and Packaging of MEMS/MOEMS 2001, (5 April 2001); doi: 10.1117/12.425388
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Deyong Chen, Institute of Electronics (China)
Shanhong Xia, Institute of Electronics (China)

Published in SPIE Proceedings Vol. 4408:
Design, Test, Integration, and Packaging of MEMS/MOEMS 2001
Bernard Courtois; Jean Michel Karam; Steven Peter Levitan; Karen W. Markus; Andrew A. O. Tay; James A. Walker, Editor(s)

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