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Proceedings Paper

Microwave frequency acoustic resonators implemented on monolithic Si/AIN substrates
Author(s): Cinzia Caliendo; Enrico Verona; Alessandro Cimmino
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Paper Abstract

Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.

Paper Details

Date Published: 30 April 2001
PDF: 8 pages
Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); doi: 10.1117/12.425331
Show Author Affiliations
Cinzia Caliendo, Istituto di Acustica (Italy)
Enrico Verona, Istituto di Acustica (Italy)
Alessandro Cimmino, Istituto di Acustica (Italy)


Published in SPIE Proceedings Vol. 4407:
MEMS Design, Fabrication, Characterization, and Packaging
Uwe F. W. Behringer; Deepak G. Uttamchandani, Editor(s)

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