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Proceedings Paper

Method of localized and low-temperature wafer bonding for microsystem packaging
Author(s): S.C. Shen; Chengtang Pan; Hwai-Pwu Chou
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Paper Abstract

This paper presents a novel approach for bonding technique based on the concept of patternable and low temperature process. This method especially is suitable for the design of microstructure by surface micromachining. By this way, the bonding can be solved. The patternable intermediate of photoresist is applied to conduct wafer-bonding experiment. SU-8 is selected as intermediate layer the thickness of SU-8 not only can be easily controlled, but also can be patterned into any-shape by the technique. Furthermore, this method provides smooth intermediate pad to contact for bonding. The experiment of wafer-to-wafer intermediate bonding was conducted. The preliminary results show that the influences of high temperature, electric field, and void can be avoided. The tensile stress test is shown the bonding strength up to 216 kg/cm2 can be reached.

Paper Details

Date Published: 30 April 2001
PDF: 8 pages
Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); doi: 10.1117/12.425301
Show Author Affiliations
S.C. Shen, National Tsing Hua Univ. (Taiwan)
Chengtang Pan, Industrial Technology Research Institute (Taiwan)
Hwai-Pwu Chou, National Tsing Hua Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4407:
MEMS Design, Fabrication, Characterization, and Packaging
Uwe F. W. Behringer; Deepak G. Uttamchandani, Editor(s)

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