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Proceedings Paper

Profile control of SU-8 photoresist using different radiation sources
Author(s): Zheng Cui; Derek W.K. Jenkins; Andreas Schneider; Geoff McBride
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Paper Abstract

Patterning of thick layer SU-8 photoresist has been investigated with different radiation sources, including electron beam, X-ray, i-line stepper, UV mercury lamp with collimator, as well as two different types of UV contact maskaligner. Feature profiles with thickness up to 1 mm have been compared. Among all the radiation sources, x-ray exposure from a synchrotron radiation source is found to produce the best feature dimension control and has the highest feature aspect ratio. I-line stepper can also produce features with steep side wall but is limited to less than 200 micrometers resist thickness. The illumination parallelism is the key to control the resist profile, no matter what radiation sources are used. Other issues such as process condition become important when resist layer thickness is over 500 micrometers . Conditions for better profile control with thicker layer SU-8 photoresist are suggested.

Paper Details

Date Published: 30 April 2001
PDF: 7 pages
Proc. SPIE 4407, MEMS Design, Fabrication, Characterization, and Packaging, (30 April 2001); doi: 10.1117/12.425291
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Derek W.K. Jenkins, Rutherford Appleton Lab. (United Kingdom)
Andreas Schneider, Rutherford Appleton Lab. (United Kingdom)
Geoff McBride, Rutherford Appleton Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 4407:
MEMS Design, Fabrication, Characterization, and Packaging
Uwe F. W. Behringer; Deepak G. Uttamchandani, Editor(s)

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