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Proceedings Paper

Photo-induced effects in the glass-ITO system
Author(s): Jadwiga Olesik
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Paper Abstract

Using the controlled Malter effect the study was carried out on the application of ITO type oxide layers (In2O3-Sn, SnO2-Sb, 10 nm and 200 nm) deposited onto a glass substrate as a relatively stable electron emitter. The polarizing voltage Upol has been applied to the field electrode. The investigations were performed in the vacuum of the order 10-6Pa. As a result of applying Upol and illumination, electrons and photoelectrons are released and enter electron multiplier. The electrons create voltage pulses in the multiplier which are recorded in the multichannel pulse amplitude analyzer. The amplitude spectra N(U) equals f(U) were measured for unilluminated samples and illuminated by a quartz lamp. The exponential dependence of the pulse frequency n equals f(Upol) has been found. It was also found that additional effect at simultaneous emission of two electrons (DPE - double photoelectron emission) as result of absorption of a single photon have to be taken into account. Using the retarding field method was evaluated that the emitted electron energy (in dark and under illumination) can achieve even 50 eV, but most of the electrons (about 80%) have energies from hear zero up to 10 eV. Photoinduced optical phenomena in glass-ITO system are studied using experimental spectroscopic and theoretical quantum chemical methods. Photoinduced optical second harmonic (SHG) has been also observed in these films. Theoretical calculations have shown that SnO4 tetrahedral interacting with SiO4 clusters of the glass substrate play central role in observed nonlinear photoinduced changes.

Paper Details

Date Published: 23 April 2001
PDF: 9 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425278
Show Author Affiliations
Jadwiga Olesik, Pedagogical Univ. of Czestochowa (Poland)

Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
Gudrun Kissinger; Larg H. Weiland, Editor(s)

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