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Proceedings Paper

In-line reaction based on predictive yield-loss analysis
Author(s): Miguel Recio; Miguel Alonso Merino; Alfredo Garcia; Sergio Cruceta
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Paper Abstract

In-line reaction to defect excursions is becoming critical to the semiconductor fabs to achieve competitive advantages by maintaining good learning curves. Traditional reaction techniques are based on the SPC methodology applied to process variables and data provided by the inspection tools, like defect counts by layer or classified defects (either manually or by ADC). But all these techniques lack from a fundamental information: the killing potential of the variables under control. Many times, 'out of control' processes mean no yield loss, whereas small deviations in 'in-control' processes can cause severe damage. We present a methodology to achieve in- line reaction based on combining predictive yield loss calculation for the lots currently being processed and SPC methodology. This analysis method opens a new perspective for the in-line reaction tools and provides a way to reduce dramatically the amount of yield excursions.

Paper Details

Date Published: 23 April 2001
PDF: 5 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425271
Show Author Affiliations
Miguel Recio, Agere Systems (Spain)
Miguel Alonso Merino, Agere Systems (Spain)
Alfredo Garcia, Agere Systems (Spain)
Sergio Cruceta, Agere Systems (Spain)


Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
Gudrun Kissinger; Larg H. Weiland, Editor(s)

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