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Proceedings Paper

Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage
Author(s): Kelvin Yih-Yuh Doong; Sheng-che Lin; Sunnys Hsieh; Binson Shen; Yu-Hao Yang; Peter Chen; Charles Ching-Hsiang Hsu
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Paper Abstract

The dislocation at the trench corner under Poly mask edges was found to be the major killer of junction leakage in generic logic technology. The impact of the sacrificial oxide (SAC-OX) of the well ion implantation (I/I) module and the source/drain (S/D) I/I to the defect formation are investigated for the first time. The influence on N+/P-Well junction leakage caused by the I/I sacrificial oxide from the Rapid Thermal Oxidation (RTO) and Furnace Oxidation (FO) are evaluated by using the process monitoring test structures. Based on the analysis of test structures and the yield evaluation of product, the optimized condition is proposed.

Paper Details

Date Published: 23 April 2001
PDF: 8 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425269
Show Author Affiliations
Kelvin Yih-Yuh Doong, Taiwan Semiconductor Manufacturing Co., Ltd. and National Tsing Hua Univ. (Taiwan)
Sheng-che Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Sunnys Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Binson Shen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yu-Hao Yang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Peter Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Charles Ching-Hsiang Hsu, National Tsing Hua Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
Gudrun Kissinger; Larg H. Weiland, Editor(s)

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