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Proceedings Paper

Increasing etch uniformity using in-line endpoint systems on complex spacer technology
Author(s): Danielle K. Kempa; Sandra L. Hyland
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Paper Abstract

This paper examines using an optical endpoint system to control over etching of a complex spacer such as the L-shaped spacer. The endpoint detection system (EPD 202) was used to monitor the etch chemistry on the TEL Unity II e plasma etcher. EPD202 monitors the chemistry change at the top tetraethylorthosilicate (TEOS)/nitride interface and the underlying nitride/TEOS interface. Therefore, a plasma change (film change) is detected twice by the EPD202 monitoring system. This optical double endpoint algorithm reduces the possibility of over etching the layers regardless of the incoming film variations. Verification of module improvement using the endpoint algorithm, instead of the time etch, was collected by inline Tencor 1270 TUV measurements and Scanning Electron Microscope (SEM) cross-sections. The EPD202 system improved etch uniformity by 44%, thereby implying an increase in the repeatability of the gate spacer and overall reliability of the product.

Paper Details

Date Published: 23 April 2001
PDF: 5 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425267
Show Author Affiliations
Danielle K. Kempa, National Semiconductor Corp. (United States)
Sandra L. Hyland, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
Gudrun Kissinger; Larg H. Weiland, Editor(s)

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