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Proceedings Paper

Wafer-level stress data successfully used as early burn-in predictor
Author(s): Ana Sacedon; Miguel Alonso Merino; Victorino Martin Santamaria; Jesus Inarrea; Francisco J. Sanchez-Vicente; Jesus de la Hoz; Jose Angel Ayucar; Isabel Menendez-Moran; Alvaro Riloba; Carlos Mata; Miguel Recio
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Paper Abstract

We show that a simple post-stress test can provide a good early reliability indicator. The defect types that have been revealed by this post-stress test are two types of conductive particles on metal levels. This early indicator has been of great value when dealing with potentially contaminated wafers/lots and to evaluate and to prioritize the corrective actions to solve the line issues.

Paper Details

Date Published: 23 April 2001
PDF: 5 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425263
Show Author Affiliations
Ana Sacedon, Agere Systems (Spain)
Miguel Alonso Merino, Agere Systems (Spain)
Victorino Martin Santamaria, Agere Systems (Spain)
Jesus Inarrea, Agere Systems (Spain)
Francisco J. Sanchez-Vicente, Agere Systems (Spain)
Jesus de la Hoz, Agere Systems (Spain)
Jose Angel Ayucar, Agere Systems (Spain)
Isabel Menendez-Moran, Agere Systems (Spain)
Alvaro Riloba, Agere Systems (Spain)
Carlos Mata, Agere Systems (Spain)
Miguel Recio, Agere Systems (Spain)


Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II

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