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Proceedings Paper

Recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing processes
Author(s): David J. Stein; Dale L. Hetherington
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Paper Abstract

We present a summary of the recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing (CMP) processes. We discuss the technical challenges and review some of the approaches that have been published and/or patented. These methods include optical, thermal (pad temperature), friction (torque motor current), electrochemical, chemical, electrical, and acoustic (vibration). We also present experimental data obtained in our laboratory using selected endpoint methods for metal and oxide CMP.

Paper Details

Date Published: 23 April 2001
PDF: 14 pages
Proc. SPIE 4406, In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II, (23 April 2001); doi: 10.1117/12.425261
Show Author Affiliations
David J. Stein, Sandia National Labs. (United States)
Dale L. Hetherington, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 4406:
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
Gudrun Kissinger; Larg H. Weiland, Editor(s)

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