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Proceedings Paper

Characterization of ultrathin gate dielectrics using combined grazing x-ray reflectance and spectroscopic ellipsometry
Author(s): Pierre Boher; Jean-Philippe Piel; Patrick Evard; Christophe Defranoux; Jean-Louis P. Stehle
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Paper Abstract

Precise characterization of high k gate dielectrics becomes a challenging task due to the very thin thicknesses (< 3 - 4 nm), which will be needed in the next generation integrated circuits. Conventional techniques such as spectroscopic ellipsometry in the visible range becomes difficult to use alone because of the great correlation between thickness and optical indices. To overcome this problem the following strategy is applied. First, grazing x- ray reflectance is used on all the samples to extract the different layer thickness using a simple model. Second, spectroscopic ellipsometry is applied and the results fitted with the structural models deduced from the x-ray results. In this conditions a precise structural model is built which can take into account the interface and surface behavior all factors that become critical for this range of thickness. This approach is applied to various types of oxide nitride gate dielectrics and ZrO2 films. In the fist case, the nitrogen content of the films can be precisely determined and also the inhomogeneity in depth of the layers in some cases. Interface problems can also be detected on ZrO2 films. Results are compared to x-ray photo-emission measurement in some cases.

Paper Details

Date Published: 20 April 2001
PDF: 12 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425256
Show Author Affiliations
Pierre Boher, SOPRA S.A. (France)
Jean-Philippe Piel, SOPRA S.A. (France)
Patrick Evard, SOPRA S.A. (France)
Christophe Defranoux, SOPRA S.A. (France)
Jean-Louis P. Stehle, SOPRA S.A. (France)

Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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