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Proceedings Paper

Use of cooled CCD cameras to control multicharged ion beam processes
Author(s): Laurence Vallier; Vincent Le Roux; Gilles Borsoni; Michael L. Korwin-Pawlowski
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Paper Abstract

We present in this paper a new in-situ technique we have developed to monitor and to control broad ion beam processes. The base of this technique is to capture, with a Peltier-cooled CCD camera, the light emitted when the ions hit the surface of the wafer during the process. The intensity of the light and its distribution across the irradiated area is calculated from the CCD camera picture. In our processes, we measure the intensity level of the light emitted to monitor the growth or the etching of silicon oxide films by ultra slow single and multicharged ions. We also measure the intensity distribution of the light emitted from the irradiated area to control and monitor the broad ion beam uniformity. The possibility to use an in-situ monitoring system is an advantage for the equipment we develop for semiconductor manufacturing, as it will give an immediate control on the quality of every processed wafer.

Paper Details

Date Published: 20 April 2001
PDF: 7 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425255
Show Author Affiliations
Laurence Vallier, X-ion (France)
Vincent Le Roux, X-ion (France)
Gilles Borsoni, X-ion (France)
Michael L. Korwin-Pawlowski, X-ion (France)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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