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Proceedings Paper

Method of controlling wafer surface polarity to reduce spacer particle contamination
Author(s): K. C. Wu; H. H. Liu; Yuan-Ko Hwang; Shih-Shiung Chen
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Paper Abstract

In general process, there is a polymer removal step by CR-SPM (Caros' acid clean) or STD clean (Standard Clean) after spacer etching. Sometimes the particles are found by KLA scan right after CR/STD clean, but not found after spacer etching. After studying the characteristics of particles, the formation of particles is due to the polarity of OD area (active area) surface changed from hydrophilic to hydrophobic and hydrophobic particles that contained in CR/STD tank are attached on OD area surface. In this report, a whole new in-situ polarity modification concept that changing hydrophobic Si surface to hydrophilic SiO surface by adding a very short O2 plasma treatment right after spacer etch is presented. The concept is evaluated in bare silicon and TEOS control wafers, and the results reveal that O2 plasma treatment can avoid particle attachment not only effectively but also efficiently. By the experiment, in-situ five seconds' O2 plasma is implanted in spacer etching recipe and two products are split to test. The WAT (Wafer Acceptance Test) and yield of split are comparable with standard condition.

Paper Details

Date Published: 20 April 2001
PDF: 4 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425254
Show Author Affiliations
K. C. Wu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
H. H. Liu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yuan-Ko Hwang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shih-Shiung Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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