Share Email Print
cover

Proceedings Paper

Low-yield issue in IDDQ failure caused by the scrubber clean at SOG-CUR process stage
Author(s): Cheng-Fu Hsu; W. C. Chang; Chin-Hsiang Lin; C. C. Hiang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In the modern VLSI manufacture, the process control to eliminate yield loss can not be over-emphasized in multilevel integration circuit manufacture. The scrubber clean is widely used to remove the particles for yield improvement. When the wafers run through SOG-CUR(SOG curing) process, SOG film will crack at wafer edge and produce flake type particles dropping on the processing wafers, which will cause the yield loss dramatically. The scrubber clean was applied to remove these particles, however, it was found that there were some production lots suffering CP yield loss in IDDQ failure caused by the problem scrubber clean machines at SOG-CUR scrubber clean stage. It was suspected that the wafers after processing SOG-CUR is easily damaged by the ESD charge induced from scrubber clean process. The possible root cause as well as the in-line monitor procedure for the ESD charge damage is studied in this investigation. After improving the scrubber clean process, the yield and IDDQ failure is recovered.

Paper Details

Date Published: 20 April 2001
PDF: 8 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425252
Show Author Affiliations
Cheng-Fu Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
W. C. Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chin-Hsiang Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
C. C. Hiang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

© SPIE. Terms of Use
Back to Top