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Proceedings Paper

High-pressure treatment and analysis of semiconductor-metal heterophase structures
Author(s): Vladimir V. Shchennikov; Andrew Yu. Derevskov; Vladimir I. Osotov; Sergey V. Ovsyannikov
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Paper Abstract

New results of high pressure investigations of semiconductor compounds PbX (X-S, Se, Te) and novel data of thermoelectric power S of high pressure phases are presented. In vicinity of metal-semiconductor phase transformations at high pressure P above approximately 2.5, 4.5 and 6.5 GPa, respectively, where samples became a mixture of phase inclusions, disproportional variations of electrical resistance and S were observed. Analysis of properties changing was made by using of oriented inclusions model with variable phase configuration. The using of high pressure set up with sintered diamond plungers made it possible to investigate as electronic and also configuration parameters of phases for heterophase systems at high pressures.

Paper Details

Date Published: 20 April 2001
PDF: 9 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425250
Show Author Affiliations
Vladimir V. Shchennikov, Institute of Metals Physics (Russia)
Andrew Yu. Derevskov, Institute of Metals Physics (Russia)
Vladimir I. Osotov, Institute of Metals Physics (Russia)
Sergey V. Ovsyannikov, Ural State Univ. (Russia)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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