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Proceedings Paper

Volatile defect formation and polysilicon residue elimination
Author(s): Cheng-Fu Hsu
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Paper Abstract

In the manufacture of integrated circuit device, it is necessary to maintain an ultra clean wafer surface in order to obtain high quality device. NH4OH-H2O2(APM), HCL- H2O2(HPM), and H2SO4-H2O2(SPM) are efficient in removing organic or metallic impurities, but these cleaning processes will leave the surface of wafers in a hydrophilic state due to the oxidizing nature of peroxide (H2O2). There are at least two problems associated with this fact. If the surface of the wafer is an un-densified tetraethoxysilane (TEOS) film, this film will absorb moisture hydrogen from the ambient or the wet cleaning process. Also, the hydrophilic surface could retain some impurities from the cleaning chemicals. The moisture and impurities will be converted into volatile defect and act as a mask during the subsequent polysilicon etching process and the polysilicon residue is resulted.

Paper Details

Date Published: 20 April 2001
PDF: 11 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425248
Show Author Affiliations
Cheng-Fu Hsu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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