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Proceedings Paper

Structural and acoustic characterization of highly oriented piezoelectric AIN films
Author(s): Cinzia Caliendo; P. Imperatori; Enrico Verona
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Paper Abstract

Aluminum nitride piezoelectric films have been grown by reactive sputtering technique on different substrates, chosen according to their attractive properties such as high acoustic wave velocity (Al2O3, MgO, Si) and possibility to integrate the acoustic device with the electric circuitry (Si, GaAs). We have studied the AlN properties within a thickness range of 2.1 - 6.3 micrometers by means of X-ray diffraction analysis and piezoelectric d33 constants measurements, in order to define the best sputtering parameters that ensure the best quality of the AlN films.

Paper Details

Date Published: 20 April 2001
PDF: 9 pages
Proc. SPIE 4405, Process and Equipment Control in Microelectronic Manufacturing II, (20 April 2001); doi: 10.1117/12.425239
Show Author Affiliations
Cinzia Caliendo, Istituto di Acustica (Italy)
P. Imperatori, Istituto di Chimica dei Materiali (Italy)
Enrico Verona, Istituto di Acustica (Italy)


Published in SPIE Proceedings Vol. 4405:
Process and Equipment Control in Microelectronic Manufacturing II
Martin Fallon, Editor(s)

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