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Proceedings Paper

Automatic calibration of lithography simulation parameters
Author(s): Sven Jug; Richard Huang; Jeff D. Byers; Chris A. Mack
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Paper Abstract

A method is presented for automatically adjusting the input parameters of a lithography simulator to more accurately match a given set of experimental conditions. Using contrast curves, swing curves or focus-exposure matrices, simulation parameters are automatically modified in a search to minimize the difference between the simulated results and the experimental data. The algorithms used are described, as well as their robustness and sensitivity to experimental noise. Results of these tuning procedures are presented and the tuned set of parameters is shown to give good quantitative agreement of simulation to experiment.

Paper Details

Date Published: 26 April 2001
PDF: 16 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425230
Show Author Affiliations
Sven Jug, FINLE Technologies (United States)
Richard Huang, FINLE Technologies (United States)
Jeff D. Byers, FINLE Technologies (United States)
Chris A. Mack, FINLE Technologies (United States)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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