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Proceedings Paper

Modifying the surface inhibition layer of thick resists for improved process control
Author(s): Graham G. Arthur
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Paper Abstract

A method allowing full or partial removal of the pronounced surface inhibition layer found in some thick resists is described. Removal of such surface inhibition layer allows the development step to proceed more smoothly thereby improving process control. This modification to the resist process is particularly applicable to thick resist applications such as grey-scale lithography for MEMS.

Paper Details

Date Published: 26 April 2001
PDF: 8 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425229
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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