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Proceedings Paper

Investigation of OPC mask distortion effect
Author(s): Zheng Cui; Jinglei Du
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Paper Abstract

Distortion effect in optical proximity corrected (OPC) masks on wafer level image has been investigated using combined simulation of photomask patterning process and projection optical lithography. Unlike the previous simulation of optical proximity effect, which were based on ideal mask design, the simulation presented in this paper is based on distorted mask features. The mask feature distortion comes from simulation of electron beam lithography or laser scanning lithography. Proximity effects in e-beam lithography or laser direct write has been taken into account for the generation of mask features. The simulation has demonstrated that the OPC compensation features are significantly distorted at mask level. Such distortions have noticeable impact on the wafer level resist images.

Paper Details

Date Published: 26 April 2001
PDF: 7 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425225
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Jinglei Du, Sichuan Univ. (China)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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