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Proceedings Paper

Automatic resist parameter calibration procedure for lithography simulation
Author(s): Bernd Tollkuehn; Max J. Hoepfl; Andreas Erdmann; Stefan Majoni; Marion Jess
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Paper Abstract

The simulation of photolithographic processes depends on accurate resist modeling parameters. In this paper we present an automated fitting procedure which can be applied to arbitrary combinations of experimental data and model parameters. The procedure is applied to a typical i-line process. The resulting models are evaluated with respect to their performance for the full set of experimental data. The correlation of model parameters with certain experimental data is discussed and an optimum automatic parameters extraction procedure for i-line resists is proposed. Finally, we evaluate the extracted parameters by comparing different simulated profiles with cross-section SEM pictures.

Paper Details

Date Published: 26 April 2001
PDF: 12 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425221
Show Author Affiliations
Bernd Tollkuehn, Fraunhofer Institute of Integrated Circuits (Germany)
Max J. Hoepfl, Univ. of Applied Sciences Cologne (Germany)
Andreas Erdmann, Fraunhofer Institute of Integrated Circuits (Germany)
Stefan Majoni, Philips Semiconductors SMST GmbH (Germany)
Marion Jess, Philips Semiconductors SMST GmbH (Germany)


Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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