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Proceedings Paper

0.11-um imaging in KrF lithography using dipole illumination
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Paper Abstract

Even with increasing numerical apertures and decreasing wavelength sin optical lithography, the practical k1 factor used in IC fabrication will continue to decrease ever closer to the theoretical 0.25 limit. This paper presents result of a feasibility study on 0.11 micrometers imaging with dipole illumination on a 0.70 NA KrF tool using a binary mask. The obvious advantage of dipole illumination techniques is the strong enhancement of exposure latitude (EL) and depth of focus (DOF) for specific dense structures. However, there are also many drawbacks for other feature types and geometries. These must be either avoided or overcome. To deal with these drawbacks int eh best way, detailed knowledge of the unwanted effects is needed. This article deals with two categories of trade-offs that must be considered when applying dipole illumination.

Paper Details

Date Published: 26 April 2001
PDF: 13 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425215
Show Author Affiliations
Mark Eurlings, ASML (Netherlands)
Eelco van Setten, ASML (Netherlands)
Juan Andres Torres, ASML (United States)
Mircea V. Dusa, ASML (United States)
Robert John Socha, ASML (United States)
Luigi Capodieci, ASML (United States)
Jo Finders, ASML (Netherlands)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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